Low temperature thermal atomic layer deposition of aluminum nitride using hydrazine as the nitrogen source

  1. Jung, Y.C.
  2. Hwang, S.M.
  3. Le, D.N.
  4. Kondusamy, A.L.N.
  5. Mohan, J.
  6. Kim, S.W.
  7. Kim, J.H.
  8. Lucero, A.T.
  9. Ravichandran, A.
  10. Kim, H.S.
  11. Kim, S.J.
  12. Choi, R.
  13. Ahn, J.
  14. Alvarez, D.
  15. Spiegelman, J.
  16. Kim, J.
Revue:
Materials

ISSN: 1996-1944

Année de publication: 2020

Volumen: 13

Número: 15

Pages: 1-10

Type: Article

DOI: 10.3390/MA13153387 GOOGLE SCHOLAR lock_openAccès ouvert editor
La source de données: Scopus