Low temperature thermal atomic layer deposition of aluminum nitride using hydrazine as the nitrogen source

  1. Jung, Y.C.
  2. Hwang, S.M.
  3. Le, D.N.
  4. Kondusamy, A.L.N.
  5. Mohan, J.
  6. Kim, S.W.
  7. Kim, J.H.
  8. Lucero, A.T.
  9. Ravichandran, A.
  10. Kim, H.S.
  11. Kim, S.J.
  12. Choi, R.
  13. Ahn, J.
  14. Alvarez, D.
  15. Spiegelman, J.
  16. Kim, J.
Aldizkaria:
Materials

ISSN: 1996-1944

Argitalpen urtea: 2020

Alea: 13

Zenbakia: 15

Orrialdeak: 1-10

Mota: Artikulua

DOI: 10.3390/MA13153387 GOOGLE SCHOLAR lock_openSarbide irekia editor
Datuen iturria: Scopus