Rashba semiconductor as spin Hall material: Experimental demonstration of spin pumping in wurtzite n-GaN:Si

  1. Adhikari, R.
  2. Matzer, M.
  3. Martín-Luengo, A.T.
  4. Scharber, M.C.
  5. Bonanni, A.
Revue:
Physical Review B

ISSN: 2469-9969 2469-9950

Année de publication: 2016

Volumen: 94

Número: 8

Type: Article

DOI: 10.1103/PHYSREVB.94.085205 GOOGLE SCHOLAR