Rashba semiconductor as spin Hall material: Experimental demonstration of spin pumping in wurtzite n-GaN:Si
- Adhikari, R.
- Matzer, M.
- Martín-Luengo, A.T.
- Scharber, M.C.
- Bonanni, A.
ISSN: 2469-9969, 2469-9950
Argitalpen urtea: 2016
Alea: 94
Zenbakia: 8
Mota: Artikulua