Reliability and Robustness Tests for Next-Generation High-Voltage SiC MOSFETs

  1. Soler, V.
  2. Cabello, M.
  3. Banu, V.
  4. Jorda, X.
  5. Montserrat, J.
  6. Rebollo, J.
  7. Rogina, M.R.
  8. Mihaila, A.
  9. Godignon, P.
Revue:
IEEE Journal of Emerging and Selected Topics in Power Electronics

ISSN: 2168-6785,  2168-6777

Année de publication: 2021

Volumen: 9

Número: 4

Pages: 4320-4329

Type: Article

DOI: 10.1109/JESTPE.2020.3028159 GOOGLE SCHOLAR
La source de données: Scopus