Effect of dielectric polarization on the properties of charged point defects in insulating crystals: The nitrogen vacancy in AlN

  1. Vail, J.M.
  2. Schindel, D.
  3. Yang, A.
  4. Penner, O.
  5. Pandey, R.
  6. Jiang, H.
  7. Blanco, M.A.
  8. Costales, A.
  9. Qiu, Q.C.
  10. Xu, Y.
Revista:
Journal of Physics Condensed Matter

ISSN: 0953-8984

Ano de publicación: 2004

Volume: 16

Número: 20

Páxinas: 3371-3378

Tipo: Artigo

DOI: 10.1088/0953-8984/16/20/008 GOOGLE SCHOLAR