Effect of dielectric polarization on the properties of charged point defects in insulating crystals: The nitrogen vacancy in AlN

  1. Vail, J.M.
  2. Schindel, D.
  3. Yang, A.
  4. Penner, O.
  5. Pandey, R.
  6. Jiang, H.
  7. Blanco, M.A.
  8. Costales, A.
  9. Qiu, Q.C.
  10. Xu, Y.
Revue:
Journal of Physics Condensed Matter

ISSN: 0953-8984

Année de publication: 2004

Volumen: 16

Número: 20

Pages: 3371-3378

Type: Article

DOI: 10.1088/0953-8984/16/20/008 GOOGLE SCHOLAR