2024

1. A Physics-Oriented Analysis of SiC Trench MOSFETs Under Gate Switching Stress Test Conditions

   Proceedings of the International Symposium on Power Semiconductor Devices and ICs

2. Aging Modeling and Simulation of the Gate Switching Instability Degradation in SiC MOSFETs

   Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

3. Aging Modeling and Simulation of the Gate Switching Instability Degradation in SiC MOSFETs

   2024 IEEE Applied Power Electronics Conference and Exposition (APEC)

4. Deep Investigation on SiC MOSFET Degradation under Gate Switching Stress and Application Switching Stress

   Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

5. Deep Investigation on SiC MOSFET Degradation under Gate Switching Stress and Application Switching Stress

   2024 IEEE Applied Power Electronics Conference and Exposition (APEC)