Deep Investigation on SiC MOSFET Degradation under Gate Switching Stress and Application Switching Stress

  1. Gómez, A.A.
  2. García-Meré, J.R.
  3. Rodríguez, A.
  4. Rodríguez, J.
  5. Jimenez, C.
  6. Roig-Guitart, J.
Actas:
Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

ISSN: 1048-2334

ISBN: 9798350316643

Año de publicación: 2024

2024 IEEE Applied Power Electronics Conference and Exposition, APEC 2024

Páginas: 1067-1072

Tipo: Aportación congreso

DOI: 10.1109/APEC48139.2024.10509140 GOOGLE SCHOLAR