GRUPO DE NANOCIENCIA
UONANO
Universidade do Minho
Braga, PortugalPublicaciones en colaboración con investigadores/as de Universidade do Minho (16)
2017
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SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers
Nanotechnology, Vol. 28, Núm. 34
2014
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IBA study of SiGe/SiO2 nanostructured multilayers
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 331, pp. 89-92
2013
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Influence of RF-sputtering power on formation of vertically stacked Si
1-x
Ge
x
nanocrystals between ultra-thin amorphous Al
2
O
3
layers: Structural and photoluminescence properties
Journal of Physics D: Applied Physics, Vol. 46, Núm. 38
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A shadowed off-axis production of Ge nanoparticles in Ar gas atmosphere by pulsed laser deposition
Applied Physics A: Materials Science and Processing, Vol. 110, Núm. 3, pp. 585-590
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Charge trapping properties and retention time in amorphous SiGe/SiO 2 nanolayers
Journal of Physics D: Applied Physics, Vol. 46, Núm. 9
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Improvement of the fatigue and the ferroelectric properties of PZT films through a LSCO seed layer
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 178, Núm. 18, pp. 1224-1229
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Shadowed off-axis production of Ge nanoparticles in Ar gas atmosphere by pulsed laser deposition: Morphological, structural and charge trapping properties
Applied Surface Science, Vol. 280, pp. 632-640
2012
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Carrier storage in Ge nanoparticles produced by pulsed laser deposition
Physica Status Solidi - Rapid Research Letters, Vol. 6, Núm. 5, pp. 223-225
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Development of new high transparent hybrid organic-inorganic monoliths with surface engraved diffraction pattern
Journal of Polymer Science, Part B: Polymer Physics, Vol. 50, Núm. 7, pp. 492-499
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Effect of Pt bottom electrode texture selection on the tetragonality and physical properties of Ba 0.8Sr 0.2TiO 3 thin films produced by pulsed laser deposition
Journal of Applied Physics, Vol. 112, Núm. 4
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Ferroelectric switching behavior of pulsed laser deposited Ba 0.8Sr 0.2TiO 3 thin films
Current Applied Physics, Vol. 12, Núm. 4, pp. 1144-1147
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Ge nanocrystals with highly uniform size distribution deposited on alumina at room temperature by pulsed laser deposition: Structural, morphological, and charge trapping properties
Journal of Nanoparticle Research, Vol. 14, Núm. 5
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Influence of annealing conditions on the formation of regular lattices of voids and Ge quantum dots in an amorphous alumina matrix
Nanotechnology, Vol. 23, Núm. 40
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Structural and electrical properties of nanostructured Ba 0.8Sr 0.2TiO 3 films deposited by pulsed laser deposition
Journal of Nano Research
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Structural and electrical studies of ultrathin layers with Si 0.7Ge 0.3 nanocrystals confined in a SiGe/SiO 2 superlattice
Journal of Applied Physics
2010
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Self-assembling of Ge quantum dots in an alumina matrix
Physical Review B - Condensed Matter and Materials Physics, Vol. 82, Núm. 23