Tris(dimethylamido)aluminum(III) and N2H4: Ideal precursors for the low-temperature deposition of large grain, oriented c-axis AlN on Si via atomic layer annealing

  1. Ueda, S.T.
  2. McLeod, A.
  3. Alvarez, D.
  4. Moser, D.
  5. Kanjolia, R.
  6. Moinpour, M.
  7. Woodruff, J.
  8. Kummel, A.C.
Aldizkaria:
Applied Surface Science

ISSN: 0169-4332

Argitalpen urtea: 2021

Alea: 554

Mota: Artikulua

DOI: 10.1016/J.APSUSC.2021.149656 GOOGLE SCHOLAR
Datuen iturria: Scopus