Tris(dimethylamido)aluminum(III) and N2H4: Ideal precursors for the low-temperature deposition of large grain, oriented c-axis AlN on Si via atomic layer annealing

1. Ueda, S.T.
2. McLeod, A.
3. Alvarez, D.
4. Moser, D.
5. Kanjolia, R.
6. Moinpour, M.
7. Woodruff, J.
8. Kummel, A.C.