Characteristic jump in the electrical properties of a Pd/AlN/Si -based device on exposure to hydrogen

  1. Thakur, J.S.
  2. Prakasam, H.E.
  3. Zhang, L.
  4. McCullen, E.F.
  5. Rimai, L.
  6. García-Suárez, V.M.
  7. Naik, R.
  8. Ng, K.Y.S.
  9. Auner, G.W.
Journal:
Physical Review B - Condensed Matter and Materials Physics

ISSN: 1098-0121,  1550-235X

Year of publication: 2007

Volume: 75

Issue: 7

Type: Article

DOI: 10.1103/PHYSREVB.75.075308 GOOGLE SCHOLAR
Data source: Scopus