Design and construction of a DAB using SiC MOSFETs with an isolation of 24 kV for PET applications

  1. Saeed, M.
  2. Rogina, M.R.
  3. López, M.
  4. Rodríguez, A.
  5. Arias, M.
  6. Briz, F.
Aktak:
2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe

ISBN: 9789075815276

Argitalpen urtea: 2017

Alea: 2017-January

Mota: Biltzar ekarpena

DOI: 10.23919/EPE17ECCEEUROPE.2017.8099160 GOOGLE SCHOLAR
Datuen iturria: Scopus