Design and construction of a DAB using SiC MOSFETs with an isolation of 24 kV for PET applications

  1. Saeed, M.
  2. Rogina, M.R.
  3. López, M.
  4. Rodríguez, A.
  5. Arias, M.
  6. Briz, F.
Actes:
2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe

ISBN: 9789075815276

Any de publicació: 2017

Volum: 2017-January

Tipus: Aportació congrés

DOI: 10.23919/EPE17ECCEEUROPE.2017.8099160 GOOGLE SCHOLAR
Font de les dades: Scopus