Design and construction of a DAB using SiC MOSFETs with an isolation of 24 kV for PET applications

  1. Saeed, M.
  2. Rogina, M.R.
  3. López, M.
  4. Rodríguez, A.
  5. Arias, M.
  6. Briz, F.
Proceedings:
2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe

ISBN: 9789075815276

Year of publication: 2017

Volume: 2017-January

Type: Conference paper

DOI: 10.23919/EPE17ECCEEUROPE.2017.8099160 GOOGLE SCHOLAR
Data source: Scopus