Quantitative depth profile analysis of boron implanted silicon by pulsed radiofrequency glow discharge time-of-flight mass spectrometry
- Pisonero, J.
- Lobo, L.
- Bordel, N.
- Tempez, A.
- Bensaoula, A.
- Badi, N.
- Sanz-Medel, A.
ISSN: 0927-0248
Year of publication: 2010
Volume: 94
Issue: 8
Pages: 1352-1357
Type: Article