CESAR
GONZALEZ PASCUAL
University of Paris-Saclay
Gif-sur-Yvette, FranciaPublicacións en colaboración con investigadores/as de University of Paris-Saclay (11)
2024
-
Atomic-scale characterization of defects in oxygen plasma-treated graphene by scanning tunneling microscopy
Carbon, Vol. 227
-
Scanning tunneling microscopy of ultrathin indium intercalated between graphene and SiC using confinement heteroepitaxy
Applied Physics Letters, Vol. 125, Núm. 18
-
Spatially Extended Charge Density Wave Switching by Nanoscale Local Manipulation in a VTe2 Monolayer
Nano Letters, Vol. 24, Núm. 11, pp. 3470-3475
2023
-
Growth and local electronic properties of Cobalt nanodots underneath graphene on SiC(0001)
Carbon, Vol. 208, pp. 22-32
-
Intrinsic defects and mid-gap states in quasi-one-dimensional indium telluride
Physical Review Research, Vol. 5, Núm. 3
-
Positional and Rotational Molecular Degrees of Freedom at a Roughened Metal-Organic Interface: The Copper-Fullerene System and Its Multiple Structural Phases
Journal of Physical Chemistry C, Vol. 127, Núm. 37, pp. 18765-18777
2021
-
Dispersing and semi-flat bands in the wide band gap two-dimensional semiconductor bilayer silicon oxide
2D Materials, Vol. 8, Núm. 3
-
Theoretical approach to point defects in a single transition metal dichalcogenide monolayer: Conductance and force calculations inMoS2
Comptes Rendus Physique, Vol. 22, pp. 1-19
2017
-
Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities
ACS Nano, Vol. 11, Núm. 11, pp. 11206-11216
2016
-
Energetic analysis of He and monovacancies in Cu/W metallic interfaces
Materials and Design, Vol. 91, pp. 171-179
-
Theoretical characterisation of point defects on a MoS2 monolayer by scanning tunnelling microscopy
Nanotechnology, Vol. 27, Núm. 10