Characteristics of GaAsAlGaAs (SCH) lasers grown by low‐temperature LPE technique

  1. Diaz, P.
  2. Prutskij, T.A.
  3. Sanchez, M.
  4. Larionov, V.R.
  5. Khvostikov, V.P.
Revue:
Crystal Research and Technology

ISSN: 1521-4079,  0232-1300

Année de publication: 1989

Volumen: 24

Número: 9

Pages: 921-928

Type: Article

DOI: 10.1002/CRAT.2170240914 GOOGLE SCHOLAR
La source de données: Scopus