Mechanism of the band gap opening across the order-disorder transition of Si(111)(4×1)-In

  1. González, C.
  2. Guo, J.
  3. Ortega, J.
  4. Flores, F.
  5. Weitering, H.H.
Revue:
Physical Review Letters

ISSN: 0031-9007,  1079-7114

Année de publication: 2009

Volumen: 102

Número: 11

Type: Article

DOI: 10.1103/PHYSREVLETT.102.115501 GOOGLE SCHOLAR
La source de données: Scopus