Publicacions en què col·labora amb José Ortega Mateo (21)

2023

  1. Evidence for chiral superconductivity on a silicon surface

    Nature Physics, Vol. 19, Núm. 4, pp. 500-506

  2. Giant electron-phonon interaction for a prototypical semiconductor interface: Sn/ Ge(111)-(3×3)

    Physical Review B, Vol. 107, Núm. 4

2014

  1. Statistical analysis of stretched aluminum nanowires

    Journal of Nanoparticle Research, Vol. 16, Núm. 2

2012

  1. Improvement of scanning tunneling microscopy resolution with H-sensitized tips

    Physical Review Letters, Vol. 108, Núm. 24

  2. Theoretical characterization of the TTF/Au (1 1 1) interface: STM imaging, band alignment and charging energy

    Organic Electronics, Vol. 13, Núm. 3, pp. 399-408

2010

  1. Charging energy, self-interaction correction and transport energy gap for a nanogap organic molecular junction

    Organic Electronics, Vol. 11, Núm. 2, pp. 332-337

2009

  1. Initial stages of the contact between a metallic tip and carbon nanotubes

    Physical Review Letters, Vol. 102, Núm. 10

  2. Mechanism of the band gap opening across the order-disorder transition of Si(111)(4×1)-In

    Physical Review Letters, Vol. 102, Núm. 11

2008

  1. Mechanical and electrical properties of stretched clean and H-contaminated Pd-nanowires

    Nanotechnology, Vol. 19, Núm. 33

2007

  1. Controlled self-organization of atom vacancies in monatomic gallium layers

    Physical Review Letters, Vol. 99, Núm. 11

2006

  1. González, flores, and ortega reply

    Physical Review Letters

  2. Soft phonon, dynamical fluctuations, and a reversible phase transition: Indium chains on silicon

    Physical Review Letters, Vol. 96, Núm. 13

2005

  1. Ga-induced atom wire formation and passivation of stepped Si(112)

    Physical Review B - Condensed Matter and Materials Physics, Vol. 72, Núm. 12

  2. Metal-insulator transition in one-dimensional In-chains on Si(111): Combination of a soft shear distortion and a double-band Peierls instability

    New Journal of Physics, Vol. 7

  3. Origin of contrast in STM images of oxygen on Pd(111) and its dependence on tip structure and tunneling parameters

    Physical Review B - Condensed Matter and Materials Physics, Vol. 71, Núm. 11

2004

  1. First-principles simulations of STM images: From tunneling to the contact regime

    Physical Review B - Condensed Matter and Materials Physics, Vol. 70, Núm. 8

  2. Formation of atom wires on vicinal silicon

    Physical Review Letters, Vol. 93, Núm. 12

  3. Selenium passivation of GaAs(001): A combined experimental and theoretical study

    Journal of Physics Condensed Matter, Vol. 16, Núm. 13, pp. 2187-2206

2003

  1. Chalcogen passivation of GaAs(1 0 0) surfaces: Theoretical study

    Applied Surface Science

  2. Surface properties of chalcogen passivated GaAs(1 0 0)

    Applied Surface Science