A Physics-Oriented Analysis of SiC Trench MOSFETs Under Gate Switching Stress Test Conditions

  1. Roig, J.
  2. Krishna, R.
  3. Jimenez-Guerra, C.
  4. Gomez, A.A.
  5. Garcia-Mere, J.R.
  6. Rodriguez, A.
  7. Rodriguez, J.
Aktak:
Proceedings of the International Symposium on Power Semiconductor Devices and ICs

ISSN: 1063-6854

ISBN: 9798350394825

Argitalpen urtea: 2024

2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings

Orrialdeak: 100-103

Mota: Biltzar ekarpena

DOI: 10.1109/ISPSD59661.2024.10579599 GOOGLE SCHOLAR
Datuen iturria: Scopus