Power Loss Modeling and Impact of Current Measurement on the Switching Characterization in Enhancement-mode GaN Transistors

  1. Mdanat, R.A.
  2. Georgious, R.
  3. Saeed, S.
  4. Garcia, J.
Revue:
IEEE Journal of Emerging and Selected Topics in Power Electronics

ISSN: 2168-6785,  2168-6777

Année de publication: 2024

Type: Article

DOI: 10.1109/JESTPE.2024.3431270 GOOGLE SCHOLAR
La source de données: Scopus