Aging Modeling and Simulation of the Gate Switching Instability Degradation in SiC MOSFETs

  1. Garcia-Mere, J.R.
  2. Gomez, A.A.
  3. Roig-Guitart, J.
  4. Rodriguez, J.
  5. Rodriguez, A.
Konferenzberichte:
Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

ISSN: 1048-2334

ISBN: 9798350316643

Datum der Publikation: 2024

2024 IEEE Applied Power Electronics Conference and Exposition, APEC 2024

Seiten: 653-658

Art: Konferenz-Beitrag

DOI: 10.1109/APEC48139.2024.10509430 GOOGLE SCHOLAR