Robust low-temperature (350 °C) ferroelectric Hf0.5Zr0.5O2fabricated using anhydrous H2O2as the ALD oxidant

1. Jung, Y.C.
2. Kim, J.-H.
3. Hernandez-Arriaga, H.
4. Mohan, J.
5. Hwang, S.M.
6. Le, D.N.
7. Sahota, A.
8. Kim, H.S.
9. Kim, K.
10. Choi, R.
11. Nam, C.-Y.
12. Alvarez, D.
13. Spiegelman, J.
14. Kim, S.J.
15. Kim, J.