Un modelo integral para describir la influencia de la frecuencia de ensayo sobre los resultados de fatiga

  1. A. Fernández Canteli 1
  2. E. Castillo E. 2
  3. S. Blasón 3
  4. G. Khatibi 4
  5. B. Czerny 4
  6. M. Zareghomsheh 4
  1. 1 Universidad de Oviedo
    info
    Universidad de Oviedo

    Oviedo, España

    ROR https://ror.org/006gksa02

    Geographic location of the organization Universidad de Oviedo
  2. 2 Real Academia de Ingeniería y Real Academia de Ciencias de España
  3. 3 BAM, Berlin, Alemania
  4. 4 Vienna University of Technology
    info
    Vienna University of Technology

    Viena, Austria

    ROR https://ror.org/04d836q62

    Geographic location of the organization Vienna University of Technology
Journal:
Revista española de mecánica de la fractura

ISSN: 2792-4246

Year of publication: 2022

Issue: 3

Pages: 83-88

Type: Article

More publications in: Revista española de mecánica de la fractura

Abstract

The influence of the frequency is analyzed as a viscoelastic hardening effect of the material that leads simultaneously to a reduction of the nominal values of the maximum stress, σM, and the stress ratio, R, applied during the test for increasing frequency. In this way, the σM-R-f-N model, in which the maximum voltage is the primary reference variable while the stress ratio, R, and the frequency, f, are the secondary variables, is reduced to the three-dimensional probabilistic σM-RN model, recently developed. The nominal σM-R pairs applied during the test are transformed into effective σM-R pairs that can be evaluated as pertaining to a single sample regardless of the test frequency and stress ratio. In addition, the model defines a normalized variable V which represents a measure of the accumulated damage when the specimen is subjected to a variable load history, allowing the evolution of the probability of failure to be estimated as a function of the applied load. The model is validated when applied to a wide experimental fatigue program carried out on high purity aluminum alloy wires, Al_H11, used in the interface of insulated gate bipolar transistors (IGBT) under three different frequencies (2, 20 and 200 Hz).