Diseño de topologías rectificadoras e inversoras clase E basadas en tecnologías GaN HEMT y E-pHEMT para aplicaciones de transmisión inalámbrica y reciclado de energía

  1. Ruiz Lavín, María de las Nieves
Dirigida por:
  1. José Ángel García García Director/a

Universidad de defensa: Universidad de Cantabria

Fecha de defensa: 21 de julio de 2017

Tribunal:
  1. Javier Sebastián Zúñiga Presidente
  2. Pere Lluis Gilabert Pinal Secretario/a
  3. Nuno Borges Carvalho Vocal

Tipo: Tesis

Teseo: 478564 DIALNET lock_openUCrea editor

Resumen

In the RF/Microwave field, efficient wireless transmission systems are being developed in order to reduce base stations electric consumption, extend battery lifetime in handsets, as well as to remotely power up wireless devices by means of wireless powering transmission (WPT) or even energy harvesting solutions. In this sense, high efficient inverter and rectifier topologies, operating in class E, have been proposed in this thesis to be used on wireless communications and WPT. On the one hand, high-efficiency power amplifiers based on GaN HEMT technology, have been designed, which were used as a part of outphasing transmitters afterwards. In addition, using GaN HEMT amplifiers and synchronous rectifiers, Class E2 DC/DC converters have been designed, to be used as envelope modulators in ET/EER architectures. On the other hand, synchronous rectifiers with E-pHEMT technology, focused on far-field power transfer and energy harvesting applications, have been designed. State-of-the-art efficiencies have been measured in some implementations.